# Raytheon awarded $14.9M contract to enhance gallium nitride semiconductor manufacturing

Raytheon received a $14.9 million contract from the U.S. Air Force Research Laboratory and Office of the Secretary of Defense to enhance gallium nitride semiconductor manufacturing for military radar and electronic warfare systems.

- Type: Contract
- Announced: 2016-11-01
- Where: Tewksbury, Massachusetts, United States
- Value: $14.9M
- Status: announced
- Products: gallium nitride semiconductors, monolithic microwave integrated circuits, circulator components
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md), [Aerospace Components](https://endata.com/sectors/aerospace-components.md)

## Companies

- [Raytheon](https://endata.com/companies/19863.md)
- [U.S. Air Force Research Laboratory](https://endata.com/companies/16221.md) (customer)

## Sources

- [militaryaerospace.com](https://www.militaryaerospace.com/communications/article/16708883/raytheon-to-enhance-gallium-nitride-technologies-for-radar-and-rf), 2016-11-01: "Officials of the U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded a $14.9 million contract for the Raytheon Integrated Defense Systems segment in Tewksbury, Mass., to enhance GaN semiconductor manufacturing."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.