# Samsung to build second semiconductor fab in Taylor, Texas

Samsung announced plans to build its second semiconductor fabrication facility in Taylor, Texas, to manufacture high-bandwidth memory base dies for AMD and Nvidia using 2nm process technology. Construction begins in November 2026, with mass production expected by 2030.

- Type: New facility
- Announced: 2026-11-03
- Where: Taylor, Texas, United States
- Starts operating: 2030
- Status: announced
- Products: high-bandwidth memory base dies, AI memory chips
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Samsung](https://endata.com/companies/5951.md)
- [NVIDIA](https://endata.com/companies/11954.md) (customer)
- [AMD](https://endata.com/companies/15370.md) (customer)

## Sources

- [signaldesk.news](https://signaldesk.news/samsung-to-make-amd-and-nvidia-hbm-parts-at-second-texas-fab-report-says), 2026-11-03: "Samsung announced plans to utilize its second semiconductor fabrication facility in Taylor, Texas, to manufacture base dies for high-bandwidth memory chips."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.