# Infineon to build €1.1B GaN power semiconductor fab in Villach, Austria

Infineon Technologies is establishing the world's first high-volume manufacturing facility for gallium nitride power semiconductors on 300-millimeter wafers at its Villach site. The company will invest around €1.1 billion by 2034, with production scheduled to start by the end of 2027.

- Type: New facility
- Announced: 2026-10-27
- Where: Villach, Austria, Austria
- Value: $1.20B (1.10B EUR)
- Starts operating: 2027
- Status: announced
- Products: gallium nitride power semiconductors on 300-millimeter wafers
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Infineon Technologies AG](https://endata.com/companies/15717.md)

## Sources

- [infineon.com](https://www.infineon.com/press-release/2026/infpr202610-021), 2026-10-26: "This substantial investment shows our clear commitment to strengthening the European semiconductor ecosystem and Europe's technological sovereignty."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.