# Nanya Technology commits $10.7B to Fab5A for 10 nm-class DRAM

Nanya Technology Board of Directors approved up to NT$346.6 billion ($10.7 billion) investment in its Fab5A facility from 2026-2029, targeting 10 nm-class DRAM nodes with EUV lithography. Wafer starts expected in H2 2027, reaching 30,000 wafers/month in 2028.

- Type: Investment
- Announced: 2026-08-05
- Where: Taiwan, TWN
- Value: $10.7B
- Starts operating: Q3 2027
- Status: announced
- Capacity: 45,000 wafers per month (maximum planned)
- Products: 10 nm-class DRAM, EUV DRAM
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Nanya Technology](https://endata.com/companies/21287.md)

## Sources

- [techpowerup.com](https://www.techpowerup.com/351415/nanya-announces-usd-10-7b-investment-in-fab5a-aims-for-10-nm-class-euv-dram), 2026-08-06: "Nanya Technology Board of Directors announced on August 5 that the company has launched its largest investment program, committing up to NT$346.6 billion (around $10.7 billion) to its Fab5A facility through 2026-2029."
- [overclock3d.net](https://overclock3d.net/news/memory/nanya-invests-10-7-billion-in-fab5a-to-make-euv-class-dram-in-2027/), 2026-08-07: "Nanya, a Taiwanese DRAM manufacturer, has committed NT$346.6 billion ($10.7 billion US) to complete its 5A Fab."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.