# Element to invest 4.4 billion rubles in GaN power transistor production in Voronezh

Russian microelectronics group Element will invest 4.4 billion rubles to produce gallium nitride (GaN) power transistors at the Research Institute of Electronic Technology (NIIET) in Voronezh. The facility will produce 5,500 200-mm wafers per year, making NIIET the first Russian full-cycle GaN transistor producer.

- Type: Investment
- Announced: 2025-07-22
- Where: Voronezh, Russia
- Value: $48.0M (4.40B RUB)
- Status: announced
- Capacity: 5,500 200-mm wafers per year
- Products: gallium nitride (GaN) power transistors
- Sectors: [Semiconductors and Industrial Electronics](https://endata.com/sectors/semiconductors-electronics.md)

## Companies

- [Element](https://endata.com/companies/29490.md)
- [Research Institute of Electronic Technology (NIIET)](https://endata.com/companies/86179.md)

## Sources

- [www1.ru](https://www1.ru/en/news/2025/07/22/krupneisii-proizvoditel-mikroelektroniki-element-vlozit-44-mlrd-rublei-v-proizvodstvo-silovyx-tr.html), 2025-07-22: "The project will expand NIIET's capabilities in the assembly of microwave and power GaN transistors: the production of gallium nitride crystals will be launched."

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Data from Endata (https://endata.com/). Announcements are summarized from public sources and may be incomplete; check the linked originals.